Method of fabricating a highly sensitive photo sensor

Details Method of fabricating a highly sensitive photo sensor Method of fabricating a highly sensitive photo sensor

1995-10-13

1998-04-14

Trinh, Michael

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438 60, 438 73, 438 85, 438 96, H01L 2182

Patent

active

057390657

ABSTRACT:
A structure of and a method for fabricating a highly sensitive photo sensor. Its structural feature is that a PIN photo diode is allocated in a MOSFET, by means of enlarging the detected small photo current from PIN photo diode by the MOSFET; so as to avoid the shortcoming of conventional PIN photo diode, and enhance the sensitivity of photo sensing.

REFERENCES:
patent: 4732873 (1988-03-01), Perbet et al.
patent: 4810662 (1989-03-01), Chang
patent: 4900694 (1990-02-01), Nakagawa
patent: 5206180 (1993-04-01), Yoshida
patent: 5424223 (1995-06-01), Hynecek
patent: 5507881 (1996-04-01), Sichanugrist et al.

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