Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Sidewall base contact
Reexamination Certificate
1999-09-15
2001-09-18
Smith, Matthew (Department: 2825)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Sidewall base contact
C438S328000, C438S350000, C438S358000, C438S330000, C438S394000
Reexamination Certificate
active
06291304
ABSTRACT:
FIELD OF THE INVENTION
The invention relates to the general field of high voltage bipolar transistors with particular reference to alternatives to SOI.
BACKGROUND OF THE INVENTION
As is well known, bipolar transistors, in their most elemental form, comprise a sandwich made up of three layers of semiconducting material, the middle layer being of an opposite conductivity type to the outer layers. Much work has been done on optimizing both the dimensions of these layers as well as determining the best way to distribute dopants within them. For the particular case of transistors that have been optimized for operation at high voltages, the form of the device is somewhat more complicated than for a ′simple′ device intended to handle low voltage signals.
An example of such a device (of the prior art), for an NPN version, is illustrated in FIG.
1
. Silicon body
2
may be an N type wafer or (as shown here) an N well that has been formed within silicon wafer
1
. P Me base layer
3
extends downward from the surface into N type silicon
2
. Within
3
are both N+ emitter
4
and a P+ base contact
5
, the two being separated from each other by field oxide
9
. A key feature of this design is that, although
2
serves as the collector it has relatively high resistivity and therefore introduces a high series resistance to the device. This problem is overcome by the introduction of a buried subcollector
6
of N+ material that is accessed at its ends through plugs, or sinkers,
8
which are themselves contacted through the N+ regions
7
. The various contact regions
4
,
5
, and
7
are all separated from one another by field oxide
9
.
This design suffers from several disadvantages including low BV
ceo
and low early voltage. A particular disadvantage is that the formation of layer
2
requires the deposition of at least 10 microns of epitaxial silicon as part of the manufacturing process. Deposition of such a thick layer can take as long as 10 minutes, thereby adding significantly to the total manufacturing cost.
An alternative design that does not require the presence of a buried collector layer is the use of silicon on insulator (SOI) technology, an example of which is shown in FIG.
2
. In this design, the main components of the device are the same as in the previous example with layer
22
serving as the collector, contacted through N+ region
7
. Surrounding the entire device is insulating layer
21
which is itself embedded within silicon wafer
1
. This approach, while effective, is significantly more expensive than more conventional approaches, including even the device of FIG.
1
.
In
FIG. 3
we show equipotential lines inside a conventional device having a V
EB
of about 0.7 volts and a V
BC
of about 8 volts. As can be seen, in the general area pointed to by arrow
31
, the equipotential lines are more crowded together, indicating a high voltage gradient and, therefore, the area in which voltage breakdown will occur first.
FIG. 4
shows curve
41
which plots collector current as a function of collector voltage, showing that breakdown occurs at about
10
volts for the conventional structure.
In the course of searching the prior art, no references that teach the structure and process of the present invention were found. A number of references of interest were, however, encountered. Two examples of SOI technology that we found were Jerome et al. (U.S. Pat No. 5,344,785) who disclose a high-speed, high voltage fully isolated bipolar transistor on an insulating substrate and U.S. Pat. No. 5,536,961 in which Nakagawa el. teach the use of dielectric isolation as a means to increase breakdown voltage, their device including high and low resistance lateral sections.
Litwin (U.S. Pat. No. 5,659,190) takes a somewhat different approach and uses a combination of a bipolar and a field effect transistor to improve breakdown voltage, showing how the two devices can be combined to fit in a small space.
Depetro et al. (U.S. Pat. No. 5,852,314) shows MOS devices with a variable length of buried layers that exploit RESURF conditions. It is not applicable to bipolar devices. Ratnakumar (U.S. Pat. No. 5,011,784) also shows a bipolar transistor with a buried region.
SUMMARY OF THE INVENTION
It has been an object of present invention to provide a bipolar transistor having a high breakdown voltage.
Another object of the invention has been that said bipolar transistor not require the use of SOI technology.
A further object of the invention has been to provide a process for manufacturing said high volt bipolar transistor.
A still further object of the invention has been that said process have a cost that is equal to or less than the cost of manufacturing comparable devices using the present state-of-the-art.
These objects have been achieved by providing a device in which, instead of a buried subcollector (which would be N+ in an NPN device), a buried P+ layer is used. The presence of this P+ layer results in pinch-off between itself and the bipolar base. This allows much higher breakdown voltages to be achieved. In particular, the device will not break down at the bottom of the base-collector junction which is the weak spot of conventional devices. A process for manufacturing this device is described. A particular feature of this new process is that the N type epitaxial layer that is grown over the P+ layer is only about half the thickness of its counterpart in the conventional device. The process is fully compatible with conventional BICMOS processes and has lower cost.
REFERENCES:
patent: 4648909 (1987-03-01), Krishna et al.
patent: 5011784 (1991-04-01), Ratnakumar
patent: 5091321 (1992-02-01), Huie et al.
patent: 5102811 (1992-04-01), Scott
patent: 5344785 (1994-09-01), Jerome et al.
patent: 5536961 (1996-07-01), Nakagawa et al.
patent: 5648281 (1997-07-01), Williams et al.
patent: 5659190 (1997-08-01), Litwin
patent: 5726477 (1998-03-01), Williams et al.
patent: 5852314 (1998-12-01), Depetro et al.
Hwang Jei-Feng
Jiang Jyh-Min
Liu Ruey-Hsin
Tsaz Jun-Lin
Ackerman Stephen B.
Anya Igwe U.
Saile George O.
Smith Matthew
Taiwan Semiconductor Manufacturing Company
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