Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1980-06-18
1982-09-07
Rutledge, L. Dewayne
Metal working
Method of mechanical manufacture
Assembling or joining
29578, 148 15, 148187, 148188, 156628, 156643, 156646, 156653, 1566591, 357 91, H01L 21306, H01L 21265
Patent
active
043476546
ABSTRACT:
A method of fabricating a high-frequency bipolar transistor structure wherein the emitter, higher impurity concentration base, and lower impurity concentration base regions are defined in a single masking operation. Permeation etching is used to etch regions of an oxide layer under a layer of resist which defines regions of the higher impurity concentration thereby simultaneously defining the emitter and lower impurity concentration base regions. The higher impurity concentration base regions are formed by ion implantation of impurities through the unetched oxide regions. The resist is then removed and the lower impurity concentration base and emitters are formed through the resulting opening in the oxide. This results in the self-aligning of the emitter regions with respect to the base regions.
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patent: 3959025 (1976-05-01), Polinsky
patent: 4149904 (1979-04-01), Jones
Bersin et al., "Dryox Process for Etching Silicon Dioxide", Solid State Technology, Apr. 1977, pp. 78-80.
Bersin, R. L., "Survey of Plasma-Etching Processes", Solid State Technology, May, 1976, pp. 31-36.
Allen Bert L.
Hu Daniel C.
Wourms Robert L.
National Semiconductor Corporation
Rutledge L. Dewayne
Saba W. G.
Schulte Neil B.
Sheridan James A.
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