Method of fabricating a heterojunction bipolar transistor

Details Method of fabricating a heterojunction bipolar transistor Method of fabricating a heterojunction bipolar transistor

2005-02-15

2005-02-15

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Having heterojunction

C438S338000

Reexamination Certificate

active

06855613

ABSTRACT:
A method of fabricating a III-V heterostructure semiconductor device. The method includes the steps of forming at least one conductive post overlying a semiconductor region to form a structure, encapsulating the structure and the conductive post to form a planarized cured passivation layer, and exposing the conductive post through the planarized cured passivation layer to form the semiconductor device.

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