Method of fabricating a heterobipolar transistor

Details Method of fabricating a heterobipolar transistor Method of fabricating a heterobipolar transistor

1997-03-14

1998-10-13

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Having heterojunction

438315, 438320, 438321, H01L 21331

Patent

active

058211497

ABSTRACT:
A method of fabricating an HBT using differential epitaxy. By using an emitter mask and an exside-inside spacer structure, a self-aligned fabrication of an emitter contact and a base contact is carried out. The emitter contact layer is made from amorphous silicon. Since the entire process sequence is very temperature-stable and can be carried out at lower implantation energies than conventional methods, HBT's having a high layer quality can be fabricated by the method of the invention which is suitable for mass production and with which high oscillation frequencies can be accomplished.

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