Method of fabricating a gate structure of a field effect...

Details Method of fabricating a gate structure of a field effect... Method of fabricating a gate structure of a field effect...

2004-04-23

2008-05-06

Vinh, Lan (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S689000, C438S706000, C438S671000, C438S712000, C438S720000, C438S942000, C257S750000, C257S758000

Reexamination Certificate

active

07368392

ABSTRACT:
A method of etching metals and/or metal-containing compounds using a plasma comprising a bromine-containing gas. In one embodiment, the method is used during fabrication of a gate structure of a field effect transistor having a titanium nitride gate electrode, an ultra-thin (about 10 to 20 Angstroms) silicon dioxide gate dielectric, and a polysilicon upper contact. In a further embodiment, the gate electrode is selectively notched to a pre-determined width.

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