Method of fabricating a gate dielectric layer for a thin...

Details Method of fabricating a gate dielectric layer for a thin... Method of fabricating a gate dielectric layer for a thin...

2005-05-03

2005-05-03

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S762000

Reexamination Certificate

active

06887743

ABSTRACT:
Methods of forming a gate dielectric layer, and a composite gate dielectric layer, for a thin film transistor, has been developed. A first embodiment of this invention describes the procedure used to create the composite gate dielectric layer. A first, thin silicon oxide gate dielectric layer is thermally grown on an underlying active semiconductor layer, such as polysilicon. A first anneal procedure, is performed at a temperature greater than the temperature used for the thermal growth of this layer, resulting in improved parametric integrity. A thicker, second silicon oxide gate dielectric layer is then thermally deposited, followed by an anneal procedure used to provide a composite gate dielectric layer comprised of a densified, thermally deposited second silicon oxide gate dielectric layer, on an underlying, thermally grown first silicon oxide gate dielectric layer. A second embodiment of this invention entails the use of the densified, thermally deposited, second silicon oxide gate dielectric layer, directly on the polysilicon, active layer.

REFERENCES:
patent: 4675978 (1987-06-01), Swartz
patent: 4851370 (1989-07-01), Doklan et al.
patent: 5712208 (1998-01-01), Tseng et al.
patent: 5940736 (1999-08-01), Brady et al.
patent: 5981347 (1999-11-01), Kuo et al.
patent: 6040207 (2000-03-01), Gardner et al.
patent: 6121095 (2000-09-01), Tai et al.
patent: 6124154 (2000-09-01), Miyasaka
patent: 6124171 (2000-09-01), Arghavani et al.
patent: 6124210 (2000-09-01), Chino et al.
patent: 6228751 (2001-05-01), Yamazaki et al.
patent: 6281138 (2001-08-01), Brady et al.
patent: 6306213 (2001-10-01), Yamazaki
patent: 6372083 (2002-04-01), Oana et al.

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