Method of fabricating a floating gate for a nonvolatile memory

Details Method of fabricating a floating gate for a nonvolatile memory Method of fabricating a floating gate for a nonvolatile memory

2007-10-16

2007-10-16

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S317000, C257SE29129, C438S260000

Reexamination Certificate

active

11317363

ABSTRACT:
A method of fabricating a gate structure (such as a floating gate) of a nonvolatile (e.g., flash) memory is described. After a polysilicon layer and a mask layer (e.g., silicon nitride) are formed on a semiconductor substrate, the silicon nitride layer is patterned and the polysilicon layer is partially etched. Then, a sidewall spacer is formed on sidewalls of the partially etched polysilicon layer and the patterned mask layer. The partially etched polysilicon layer is then fully etched, maintaining a partially etched shape at its top edge due to the sidewall spacer. The mask layer and the sidewall spacer are removed, to form a floating gate having a near-round edge shape. After full etching, the polysilicon layer may be heat-treated such that its top edge shape may become more rounded, fluent and/or stress- and/or strain-relieving.

REFERENCES:
patent: 5879992 (1999-03-01), Hsieh et al.

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