Method of fabricating a FinFET

Details Method of fabricating a FinFET Method of fabricating a FinFET

2007-07-24

2007-07-24

Warren, Matthew E. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S347000, C257S352000, C257S507000, C257SE27112

Reexamination Certificate

active

11213231

ABSTRACT:
A FinFET structure and method of forming a FinFET device. The method includes: (a) providing a semiconductor substrate, (b) forming a dielectric layer on a top surface of the substrate; (c) forming a silicon fin on a top surface of the dielectric layer; (d) forming a protective layer on at least one sidewall of the fin; and (e) removing the protective layer from the at least one sidewall in a channel region of the fin. In a second embodiment, the protective layer is converted to a protective spacer.

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