Method of fabricating a fine structure electrode

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

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430312, 430319, 430329, 430396, G03C 500, G03C 504

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active

053709730

ABSTRACT:
A fine structure T-shaped electrode is fabricated using a phase shift method. A photoresist layer is formed on a semiconductor substrate and the photoresist layer is exposed to an exposure light having a first wavelength through a photomask which has a desired pattern of a base shifting layer whereby the phase of the exposure light is shifted by 180 degrees. The photoresist layer is then exposed to another exposure light having a second wavelength that is different from the first wavelength through the photomask. The photoresist is developed to form a T-shaped resist cavity and a metal layer is deposited over the resist layer formed on the semiconductor substrate. All the metal layer is removed except for the areas covering the T-shaped photoresist pattern. The T-shaped electrode is also formed by disposing a photoresist layer on a semiconductor substrate. The photoresist is exposed to an exposure light through a photomask which has a desired pattern of a phase shift layer whereby the phase of the exposure light is reversed and the light blocking layer to block the exposure light are formed at a certain fixed distance from and in parallel with the edge of said phase shifting layer pattern and are also formed inside as well as outside of the phase shifting layer pattern. The photoresist is developed to form a T-shaped photoresist cavity. A metal layer is deposited over the photoresist pattern formed on the semiconductor substrate. All of the metal layer is then removed except for the areas covering the T-shaped photoresist pattern.

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