Method of fabricating a fin field effect transistor in a...

Details Method of fabricating a fin field effect transistor in a... Method of fabricating a fin field effect transistor in a...

2008-01-08

2008-01-08

Pham, Hoai v (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S283000, C257SE21051

Reexamination Certificate

active

07316945

ABSTRACT:
A method for fabricating a fin FET in a semiconductor device. The method includes sequentially depositing first and second insulation films on a semiconductor substrate, etching the first and second insulation films using a first mask to form a trench, and depositing a first conductor in the trench.

REFERENCES:
patent: 6946377 (2005-09-01), Chambers

Affiliated with

Also associated with

Rating

Method of fabricating a fin field effect transistor in a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating a fin field effect transistor in a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a fin field effect transistor in a... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2809657