Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-11-06
2010-11-09
Blum, David S (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S401000, C257SE21421, C257SE29264
Reexamination Certificate
active
07829951
ABSTRACT:
A method of fabricating a semiconductor using a fin field effect transistor (FINFET) is disclosed. In a particular embodiment, a method includes depositing, on a silicon substrate, a first dummy structure having a first sidewall and a second sidewall separated by a first width. The method also includes depositing, on the silicon substrate, a second dummy structure concurrently with depositing the first dummy structure. The second dummy structure has a third sidewall and a fourth sidewall that are separated by a second width. The second width is substantially greater than the first width. The first dummy structure is used to form a first pair of fins separated by approximately the first width. The second dummy structure is used to form a second pair of fins separated by approximately the second width.
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Abu-Rahma Mohamed Hassan
Han Beom-Mo
Song Seung-Chul
Blum David S
Gallardo Michelle
Pauley Nicholas J.
QUALCOMM Incorporated
Taipalatsky Sam
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