Method of fabricating a fin field effect transistor

Details Method of fabricating a fin field effect transistor Method of fabricating a fin field effect transistor

2006-06-27

2006-06-27

Wilson, Christian D. (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S149000, C438S283000, C438S517000

Reexamination Certificate

active

07067360

ABSTRACT:
A method of fabricating a fin field effect transistor is disclosed. An example method forms a thermal oxide layer as a hard mask for etching a silicon fin on an SOI substrate, transcribes a fin pattern, forms a fin FET body by etching using the fin pattern as an etch mask, and restores a sidewall damaged by the etching remove a sacrificial silicon oxide layer. The example method also deposits a high-K dielectric as a gate dielectric, deposits a metal layer, planarizes the metal layer to a height of a hard oxide, forms a nitride layer on the planarized metal layer, and patterns the nitride layer using a hard mask for forming a pattern to form a nitride layer pattern. Additionally, the example method forms a metal gate using the nitride layer pattern, removes a remaining hard oxide mask, and grows a sidewall oxide layer on the metal gate.

REFERENCES:
patent: 6413802 (2002-07-01), Hu et al.
patent: 6794718 (2004-09-01), Nowak et al.
patent: 6815268 (2004-11-01), Yu et al.

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