Method of fabricating a field emission device

Details Method of fabricating a field emission device Method of fabricating a field emission device

1995-05-09

1997-07-01

Ramsey, Kenneth J.

Electric lamp or space discharge component or device manufacturi

Process

With assembly or disassembly

445 50, H01J 902

Patent

active

056430329

ABSTRACT:
A method for fabricating a field emission device comprises the steps of forming a capping layer (20) on a silicon substrate (2) and etching the substrate to form a silicon pedestal (22) beneath the capping layer. A dielectric layer (24) is then formed along the side walls of the silicon pedestal and the surface of the silicon substrate, simultaneously sharpening the silicon pedestal into a silicon tip (26). A metal layer (28) is deposited over the capping layer and the dielectric layer such that a portion of the dielectric layer beneath the capping layer remains exposed. Finally, hydrofluoric acid is employed to lift off the capping layer and the metal layer disposed thereon and to etch the dielectric layer, thereby exposing the silicon tip as an emitter and the remaining metal layer as a gate. Since the spacing between the emitter and the gate is only limited by the thickness of the dielectric layer, it is possible to generate a submicron-scale gate aperture without the use of submicron-lithography techniques.

REFERENCES:
patent: 4172005 (1979-10-01), Muraoka et al.
patent: 5228878 (1993-07-01), Komatsu
patent: 5394006 (1995-02-01), Liu
patent: 5401676 (1995-03-01), Lee
patent: 5506476 (1996-04-01), Lee et al.
Busta "Vacuum microelectronics-1992" Journal of Micromechanics and Microengineering vol. 2, No. 2, pp. 54-56 (1992).

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