Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2007-07-24
2007-07-24
Toledo, Fernando L. (Department: 2823)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C438S301000, C438S482000, C257SE21335, C257SE21337
Reexamination Certificate
active
10905454
ABSTRACT:
A method of forming a field effect transistor is provided which includes forming an amorphized semiconductor region having a first depth from a single-crystal semiconductor region and subsequently forming a first gate conductor above a channel portion of the amorphized semiconductor region. A first dopant including at least one of an n-type dopant and a p-type dopant is then implanted to a second depth into portions of the amorphized semiconductor region not masked by the first gate conductor to form source/drain portions adjacent to the channel portion. The substrate is then heated to recrystallize the channel portion and the source/drain portions of the amorphized semiconductor region. After the heating step, at least a part of the recrystallized semiconductor region is locally heated to activate a dopant in at least one of the channel portion and the source/drain portion.
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Gluschenkov Oleg
Sung Chun-Yung
Zhu Huilong
Neff, Esq. Daryl K.
Schnurmann H. Daniel
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