Method of fabricating a dual damascene copper wire

Details Method of fabricating a dual damascene copper wire Method of fabricating a dual damascene copper wire

2005-02-01

2005-02-01

Zarabian, Amir (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S643000, C438S648000, C438S653000, C438S656000, C438S672000, C438S685000, C438S687000, C438S688000

Reexamination Certificate

active

06849541

ABSTRACT:
A method of forming at least one wire on a substrate. The substrate includes at least one conductive region. An insulating layer is disposed on the substrate. At least one recess in the insulating layer exposes the conductive region. A barrier layer is formed on a surface of the insulating layer and the recess first. A continuous and uniform conductive layer is then formed on a surface of the barrier layer. A seed layer is thereafter formed on a surface of the conductive layer. Finally, a metal layer filling up the recess is formed on a surface of the seed layer.

REFERENCES:
patent: 20010041250 (2001-11-01), Werkhoven et al.
patent: 20010054769 (2001-12-01), Raaijmakers et al.
patent: 20030205825 (2003-11-01), Fujisawa et al.
patent: 20040018722 (2004-01-01), Tarumi et al.
patent: 20040026119 (2004-02-01), Chen

Affiliated with

Also associated with

Rating

Method of fabricating a dual damascene copper wire does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating a dual damascene copper wire, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a dual damascene copper wire will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3472298