Method of fabricating a diode

Details Method of fabricating a diode Method of fabricating a diode

2009-12-29

2011-10-11

Smith, Matthew (Department: 2895)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

C438S540000, C438S543000, C438S550000, C257S487000, C257S492000, C257SE21135

Reexamination Certificate

active

08034700

ABSTRACT:
A method of fabricating a diode is disclosed. One embodiment provides a semiconductor body having a front and a back, opposite the front in a vertical direction of the semiconductor body. The semiconductor body contains, successively in the vertical direction from the back to the front, a heavily n-doped zone, a weakly n-doped zone, a weakly p-doped zone and a heavily p-doped zone. In the vertical direction, the weakly p-doped zone has a thickness of at least 25% and at most 50% of the thickness of the semiconductor body.

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