Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1996-09-09
1998-12-01
Niebling, John
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438486, 117 8, H01L 2100, H01L 2120
Patent
active
058438114
ABSTRACT:
A method of forming a crystalline thin film from an amorphous semiconductor thin film such as amorphous silicon, by providing a generally planar nucleation inducing member, such as a crystalline silicon wafer, having a number of micro-scale surface contact points and with a hardness equal to or greater than the hardness of the amorphous semiconductor thin film, contacting under pressure the surface contact points of the nucleation inducing member with the exposed surface of the amorphous thin film to form an assembly, annealing the assembly at between 300 to 700 degrees C. for 1 to 24 hours to crystallize the amorphous thin film, and removing the nucleation inducing member.
REFERENCES:
patent: 4358326 (1982-11-01), Doo
patent: 4379020 (1983-04-01), Glaeser
patent: 4596604 (1986-06-01), Akiyama et al.
patent: 5254481 (1993-10-01), Nishida
patent: 5382537 (1995-01-01), Noguchi
patent: 5466641 (1995-11-01), Shimizu et al.
patent: 5484746 (1996-01-01), Ichikawa et al.
patent: 5531182 (1996-07-01), Yonehara
patent: 5582640 (1996-12-01), Okada et al.
Hummel Rolf E.
Jung Soon-moon
Singh Rajiv K.
Lebentritt Michael S.
Niebling John
Saitta Thomas C.
University of Florida
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