Method of fabricating a contact with a post contact plug anneal

Details Method of fabricating a contact with a post contact plug anneal Method of fabricating a contact with a post contact plug anneal

2006-01-03

2006-01-03

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S643000, C438S644000, C438S645000

Reexamination Certificate

active

06982226

ABSTRACT:
The present invention provides a process for fabricating a contact plug in a semiconductor substrate having a contact opening formed therein that comprises depositing a barrier layer in the contact opening and on at least a portion of the semiconductor substrate, depositing a contact metal on the barrier layer within the contact opening, removing a substantial portion of the contact metal and the barrier layer from the semiconductor substrate and forming a contact plug within the contact opening, and subjecting the contact plug to a temperature sufficient to anneal the barrier layer.

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