Method of fabricating a conductive plug

Details Method of fabricating a conductive plug Method of fabricating a conductive plug

1996-12-17

1999-09-07

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438677, 438686, 438680, 438688, H01L 2144

Patent

active

059501081

ABSTRACT:
A method of forming a conductive plug is disclosed. A device with a conductive region is formed on a semiconductor substrate. An insulating layer is formed on the semiconductor substrate. The insulating layer is etched to form a contact window which exposes the conductive region of the device. A diffusion barrier layer is formed on the exposed conductive region and the periphery of the contact window. A hydrogen plasma treatment is performed in a reaction chamber; and a conductive material is filled in the contact window, to form the conductive plug.

REFERENCES:
patent: 5296404 (1994-03-01), Akahori et al.
patent: 5498768 (1996-03-01), Nishitani et al.
patent: 5567987 (1996-10-01), Lee

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