Method of fabricating a compound semiconductor device

Details Method of fabricating a compound semiconductor device Method of fabricating a compound semiconductor device

1997-10-17

1999-07-27

Wilczewski, Mary

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

438507, 438779, 438783, 438784, 438913, 438930, 438958, 438 94, 438 47, H01L 21205, H01L 3300, H01L 2131

Patent

active

059306564

ABSTRACT:
A substrate for forming a compound semiconductor device is placed in a reaction chamber. An MOCVD method or a GS-MBE method is used to grow compound semiconductor layers on the substrate. The grown layers include, for example, a GaN buffer layer, an n-GaN layer, an InGaN active layer, a p-AlGaN layer, and a p.sup.+ -GaN contact layer. After the growth of the layers, the substrate is kept in the reaction chamber, and a passivation film of, for example, SiNx, SiO2, or SiON is formed on top of the grown layers according to a CVD or GS-MBE method. Since the top of the grown layers is not exposed to air outside the reaction chamber, no oxidization or contamination occurs on the top of the grown layers. The compound semiconductor device is manufactured through simpler processes compared with a prior art that needs separate apparatuses for growing and forming the layers and passivation film.

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