Fishing – trapping – and vermin destroying
Patent
1992-12-15
1994-07-05
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437176, 437245, 437912, H01L 21203
Patent
active
053267176
ABSTRACT:
A method of fabricating a Schottky electrode by the adsorption of thin layer with not more than 10 monolayers of a metal whose oxide is stable on a III-V compound semiconductor substrate such as InP or on a substrate, the surface on which epitaxial layer is grown, and the successive oxidation of the thin metal film is disclosed. Since the generation of dangling bonds at the interface due to the elastic strain between the substrate and the metal oxide can be prevented, it becomes possible to obtain a Schottky electrode with a high Schottky barrier height and thus to fabricate MESFETs and Schottky diodes having good characteristics such as a small reverse leak current and a large break-down voltage.
REFERENCES:
patent: 4845049 (1989-07-01), Sunakawa
patent: 4859627 (1989-08-01), Sunakawa
patent: 5158909 (1992-10-01), Ohtsuka et al.
Licata et al., "Application of Photodeposited Cd to Schottky barrier Diode and Transistor Fabrication on InP and In.sub.0.53 Ga.sub.0.47 As Substrates", in Appl. Phys. Letts., 58(8), Feb. 1991, 845.
Massies et al., "Monocrystalline Alluminium Ohmic Contact to n-GaAs by H.sub.2 S Adsorption", in Appl. Phys. Letts., 38(9), May 1981, 693-695.
Imaizumi Toyoaki
Oda Osamu
Sawatari Hironobu
Chaudhuri Olik
Nikko Kyodo Co. Ltd.
Paladugu Ramamohau Rao
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