Optical semiconductor device

Details Optical semiconductor device Optical semiconductor device

1988-04-21

1990-03-20

James, Andrew J.

Coherent light generators

Particular component circuitry

Optical pumping

357 16, 357 17, 357 19, 372 8, 372 50, 350355, 330 43, H01L 29205, H01L 3106

Patent

active

049105710

ABSTRACT:
An optical semiconductor device comprises cathode and anode regions, and a gate region having a forbidden band gap narrower than those of the cathode and anode regions. The gate region is sandwiched by the cathode and anode regions. The optical semiconductor device further comprises a plurality of windows for receiving and radiating lights so that the alignment of light axes can be easily performed for a plurality of input and output lights.

REFERENCES:
patent: 4152713 (1979-05-01), Copeland, III et al.
patent: 4468772 (1984-08-01), Oudar
patent: 4547956 (1985-10-01), Brouadma et al.
patent: 4675518 (1987-06-01), Oimura et al.
patent: 4806997 (1989-02-01), Simmons et al.
Sze, Physics of Semiconductor Devices, J. Wiley & Sons, N.Y., 1969, p. 724.
G. W. Taylor et al, "A new double heterostructure . . . epitaxy", J. Appl. Phys., 59(2), Jan. 15, 1986, pp. 596-600.

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