Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Thinning of semiconductor substrate
Reexamination Certificate
2006-06-23
2008-11-11
Lindsay, Jr., Walter L. (Department: 2812)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Thinning of semiconductor substrate
C438S458000
Reexamination Certificate
active
07449395
ABSTRACT:
The invention concerns a method of fabricating a composite substrate comprising at least one thin insulating layer interposed between a support substrate and an active layer of semiconductor material. The method comprises: providing a source substrate that comprises a semiconductor material and a support substrate; forming or depositing an insulating layer on the source substrate; providing recovery heat treatment of the insulating layer; providing plasma activation of a front face of the recovery heat treated insulating layer or a front face of the support substrate; molecular bonding, after the plasma activation, the front face of the insulating layer with the front face of the support substrate to form a bonded substrate; and lifting off a back portion of the source substrate from the bonded substrate to retain an active layer that comprises a remaining portion of the source substrate.
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Allibert Frederic
Kerdiles Sébastien
Lindsay Jr. Walter L.
S.O.I.Tec Silicon on Insulator Technologies
Winston & Strawn LLP
Withers Grant S
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