Method of fabricating a combined fully-depleted...

Details Method of fabricating a combined fully-depleted... Method of fabricating a combined fully-depleted...

2007-04-03

2007-04-03

Chambliss, Alonzo (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S197000, C438S211000, C438S257000, C438S311000, C438S508000, C257S347000, C257S638000, C257SE29129, C257SE29300, C257SE21422, C257SE27112

Reexamination Certificate

active

11010849

ABSTRACT:
A method (100) of forming fully-depleted (90) and partially-depleted (92) silicon-on-insulator (SOI) devices on a single die in an integrated circuit device (2) is disclosed using SOI starting material (4, 6, 8) and a selective epitaxial growth process (110).

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