Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1984-11-15
1986-06-03
Saba, William G.
Metal working
Method of mechanical manufacture
Assembling or joining
29571, 29574, 29576B, 148 15, 148187, 148190, 148DIG53, 357 231, 357 24, 357 41, 357 45, 357 91, H01L 21265, H01L 2978
Patent
active
045921300
ABSTRACT:
The specification describes a high capacity nonvolatile CCD read only memory system that includes a plurality of memory cells. Selected ones of the memory cells include a double-diffused region having a first and second implant or diffusion under a clocked electrode whereby the first implant or diffusion provides a fixed charge required for ROM operation and the charge and polarity of said second implant or diffusion provides a neutralizing effect on the surface potential under the clocked electrode and above the double implanted or double diffused region.
REFERENCES:
patent: 3654499 (1972-04-01), Smith
patent: 3740732 (1973-06-01), Frandon
patent: 3852800 (1974-12-01), Ohwada et al.
patent: 4017883 (1977-04-01), Ho et al.
patent: 4047215 (1977-09-01), Frye et al.
patent: 4060738 (1977-11-01), Tasch et al.
patent: 4072977 (1978-02-01), Bate et al.
patent: 4112575 (1978-09-01), Fu et al.
patent: 4164751 (1979-08-01), Tasch
patent: 4215357 (1980-07-01), Kohyama et al.
Charge Transfer Devices: Sequin and Tompsett, Academic Press, Inc., 1975.
Design Considerations for a Two-Phase Buried-Channel, Charge-Coupled Device: J. McKenna, et al, The Bell System Technical Journal, vol. 53, No. 8, Oct. 1974.
Liquid Crystal Electro-Optical Modulators for Optical Processing of Two-Dimensional Data: J. Grinberg, et al, SPIE, vol. 128, 1977.
A Nonvolatile Charge-Addressed Memory (NOVCAM) Cell: Marvin H. White, et al, IEEE Journal of Solid-State Circuits, vol. SC-10, No. 5, Oct. 1975.
Charge-Coupled Memory Device: Y. T. Chan, et al, Appl. Phys. Lett., vol. 22, No. 12, Jun. 15, 1973.
Nonvolatile CCD Memory with MNOS Storage Capacitors: K. Goser, et al, IEEE Journal of Solid-State Circuits, vol. SC-9, No. 3, Jun. 1974.
A Fully Decoded 2048-Bit Electrically Programmable FAMOS Read-Only Memory: Dov Frohman-Bentchkowsky, IEEE Journal of Solid-State Circuits, vol. SC-6, No. 5, Oct. 1971.
The Metal-Nitride-Oxide-Silicon (MNOS) Transistor-Characteristics and Applications: Dov Frohman-Bentchkowsky, Proceedings of the IEEE, vol. 58, No. 8, Aug. 1970.
Hughes Aircraft Company
Karambolas A. W.
Saba William G.
LandOfFree
Method of fabricating a CCD read only memory utilizing dual-leve does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of fabricating a CCD read only memory utilizing dual-leve, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a CCD read only memory utilizing dual-leve will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1226139