Method of fabricating a CCD read only memory utilizing dual-leve

Metal working – Method of mechanical manufacture – Assembling or joining

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29571, 29574, 29576B, 148 15, 148187, 148190, 148DIG53, 357 231, 357 24, 357 41, 357 45, 357 91, H01L 21265, H01L 2978

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045921300

ABSTRACT:
The specification describes a high capacity nonvolatile CCD read only memory system that includes a plurality of memory cells. Selected ones of the memory cells include a double-diffused region having a first and second implant or diffusion under a clocked electrode whereby the first implant or diffusion provides a fixed charge required for ROM operation and the charge and polarity of said second implant or diffusion provides a neutralizing effect on the surface potential under the clocked electrode and above the double implanted or double diffused region.

REFERENCES:
patent: 3654499 (1972-04-01), Smith
patent: 3740732 (1973-06-01), Frandon
patent: 3852800 (1974-12-01), Ohwada et al.
patent: 4017883 (1977-04-01), Ho et al.
patent: 4047215 (1977-09-01), Frye et al.
patent: 4060738 (1977-11-01), Tasch et al.
patent: 4072977 (1978-02-01), Bate et al.
patent: 4112575 (1978-09-01), Fu et al.
patent: 4164751 (1979-08-01), Tasch
patent: 4215357 (1980-07-01), Kohyama et al.
Charge Transfer Devices: Sequin and Tompsett, Academic Press, Inc., 1975.
Design Considerations for a Two-Phase Buried-Channel, Charge-Coupled Device: J. McKenna, et al, The Bell System Technical Journal, vol. 53, No. 8, Oct. 1974.
Liquid Crystal Electro-Optical Modulators for Optical Processing of Two-Dimensional Data: J. Grinberg, et al, SPIE, vol. 128, 1977.
A Nonvolatile Charge-Addressed Memory (NOVCAM) Cell: Marvin H. White, et al, IEEE Journal of Solid-State Circuits, vol. SC-10, No. 5, Oct. 1975.
Charge-Coupled Memory Device: Y. T. Chan, et al, Appl. Phys. Lett., vol. 22, No. 12, Jun. 15, 1973.
Nonvolatile CCD Memory with MNOS Storage Capacitors: K. Goser, et al, IEEE Journal of Solid-State Circuits, vol. SC-9, No. 3, Jun. 1974.
A Fully Decoded 2048-Bit Electrically Programmable FAMOS Read-Only Memory: Dov Frohman-Bentchkowsky, IEEE Journal of Solid-State Circuits, vol. SC-6, No. 5, Oct. 1971.
The Metal-Nitride-Oxide-Silicon (MNOS) Transistor-Characteristics and Applications: Dov Frohman-Bentchkowsky, Proceedings of the IEEE, vol. 58, No. 8, Aug. 1970.

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