Method of fabricating a capacitor for a dynamic random access me

Details Method of fabricating a capacitor for a dynamic random access me Method of fabricating a capacitor for a dynamic random access me

1991-07-01

1994-11-15

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 60, 437919, H01L 2170, H01L 2700

Patent

active

053648099

ABSTRACT:
A method of fabricating a multi-chamber type DRAM cell capacitor having high capacitance within a limited area. A first concave area (54) of the storage electrode (72) is formed by means of an oxide film (46) as a scarifying layer. An insulating spacer (58) is formed in the first concave area (54). Then, first and second conduction layers (48, 60) are formed on the substrate (26) and top portions of the conduction layers are removed consecutively, so as to form a capacitor having a plurality of concave areas.

REFERENCES:
patent: 5028990 (1991-07-01), Kotaki et al.
patent: 5030585 (1991-07-01), Gonzaler et al.
patent: 5047826 (1991-09-01), Keller et al.
patent: 5126280 (1992-06-01), Chan et al.
patent: 5185282 (1993-02-01), Lee et al.

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