Method of fabricating a buried contact

Details Method of fabricating a buried contact Method of fabricating a buried contact

1998-11-12

2000-11-28

Bowers, Charles

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

438197, 438233, 438238, 438533, 438647, 438524, 438514, 438527, 438453, 438666, H01L 21425, H01L 21336, H01L 2176

Patent

active

061534986

ABSTRACT:
A method of fabricating a buried contact avoids high resistance at a junction by forming a polysilicon layer in a trench. Thus, the current passage is not cut by the trench. The resistance of the trench junction is decreased.

REFERENCES:
patent: 5525552 (1996-06-01), Huang

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