Method of fabricating a bonding pad window

Details Method of fabricating a bonding pad window Method of fabricating a bonding pad window

1997-09-11

1998-12-22

Picardat, Kevin

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438621, 438672, H01L 2144

Patent

active

058519106

ABSTRACT:
A method of fabricating a bonding pad window, includes providing a substrate, which is metallized with a first metallization layer; forming a dielectric layer over the first metallization layer; defining the dielectric layer with a first mask to form a via; forming a plug in the via; forming a second metallization layer over the plug and the dielectric layer; patterning the second metallization layer to expose the dielectric layer; forming a passivation layer over the second metallization layer; and defining the passivation layer with the first mask to form the bonding pad window. This improves and simplifies the formation of a bonding pad window. For example, the process of forming a mask, which is used to form the bonding pad window, can be omitted. The previous via mask is used to form the bonding pad window and the internal circuit probing window at the same time.

REFERENCES:
patent: 4933303 (1990-06-01), Mo
patent: 5316976 (1994-05-01), Bourg, Jr. et al.
patent: 5391519 (1995-02-01), Lur et al.
patent: 5488013 (1996-01-01), Geffken et al.
patent: 5518963 (1996-05-01), Park
patent: 5591673 (1997-01-01), Chao et al.

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