Method of fabricating a bipolar transistor

Details Method of fabricating a bipolar transistor Method of fabricating a bipolar transistor

2006-04-24

2009-10-20

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S311000, C438S313000, C257SE21372

Reexamination Certificate

active

07605027

ABSTRACT:
A method of fabricating a bipolar transistor in a first trench (11) is disclosed wherein only one photolithographic mask is applied which forms a first trench (11) and a second trench (12). A collector region (21) is formed self-aligned in the first trench (11) and the second trench (12). A base region (31) is formed self-aligned on a portion of the collector region (21), which is in the first trench (11). An emitter region (41) is formed self-aligned on a portion of the base region (31). A contact to the collector region (21) is formed in the second trench (12) and a contact to the base region (31) is formed in the first trench (11). The fabrication of the bipolar transistor may be integrated in a standard CMOS process.

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