Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Reexamination Certificate
2005-11-29
2005-11-29
Letscher, Geraldine (Department: 1752)
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
C430S322000, C430S325000
Reexamination Certificate
active
06969569
ABSTRACT:
In photomask making, the environmental sensitivity of a chemically amplified photoresist is eliminated, or at least substantially reduced, by overcoating the photoresist with a thin coating (topcoat) of a protective but transmissive material. To provide improved stability during the long time period required for direct writing of a photomask pattern, typically in the range of about 20 hours, the protective topcoat material is pH adjusted to be as neutral in pH as possible, depending on other process variable requirements. For example, a pH adjusted to be in the range from about 5 to about 8 is particularly helpful. Not only is the stability of the chemically amplified photoresist better during direct writing when the protective topcoat is pH adjusted, but a photoresist-coated substrate with pH adjusted topcoat over its surface can be stored longer prior to imaging without adverse consequences.
REFERENCES:
patent: 5260349 (1993-11-01), Crivello
patent: 5492793 (1996-02-01), Breyta et al.
patent: 5545509 (1996-08-01), Cameron et al.
patent: 5641715 (1997-06-01), Okamoto
patent: 5741629 (1998-04-01), Chandross et al.
patent: 5830619 (1998-11-01), Chin et al.
patent: 5837423 (1998-11-01), Okamoto
patent: 5863705 (1999-01-01), Sezi et al.
patent: 6165682 (2000-12-01), Foster et al.
patent: 6258514 (2001-07-01), Montgomery
patent: 6727047 (2004-04-01), Montgomery et al.
patent: 4040117 (1992-06-01), None
patent: 0364368 (1990-04-01), None
patent: 0488372 (1992-06-01), None
patent: 0548488 (1993-05-01), None
patent: WO 03/010601 (2003-02-01), None
M. Angelopolous et al., “Conducting polyanilines: Discharge layers for electron-beam lithography”, Vac. Sci. Technol. B, vol. 7, No. 6, pp. 1519-1523 (1989).
M. Angelopolous et al., “Lithographic applications of conducting polymers”, J. Vac. Sci. Technol. B, vol. 9, No. 6, pp. 3428-3431 (1991).
P. Buck et al., “Performance of the ALTA 3500 scanned-laser mask lithography system”, Proceedings of SPIE, vol. 3412, pp. 67-78 (Apr. 1998).
K. Kemp et al., “Effects of DUV Resist Sensitivities n Lithographic Process Window”, Proceedings of SPIE, vol. 3049, pp. 955-962.
U. Okoroanyanwu et al., “Impact of Optical Absorption on Process Control for Sub-0.15-μm Device Patterning Using 193-nm Lithography”, Proceedings of SPIE, vol. 3998, pp. 781-790 (2000).
C. P. Soo et al., “Enhancement or Reduction of Catalytic Dissolution Reaction in Chemically Amplified Resists by Substrate Contaminants”, IEEE Transactions on Semiconductor Manufacturing, vol. 12, No. 4, pp. 462-469 (Nov. 1999).
Z. C. H. Tan et al., “Application of charge dissipation material in MEBES phase shift mask fabrication”, Proceedings of SPIE—Photomask Technology and Management, vol. 2322, pp. 141-148 (1994).
Montgomery Cecilia Annette
Montgomery Melvin Warren
Applied Materials Inc.
Church Shirley L.
Letscher Geraldine
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