Method of exposing using electron beam

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

Reexamination Certificate

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Details

C250S492100, C250S492220, C250S492210, C250S491100, C250S3960ML, C430S005000, C430S296000, C430S022000, C430S030000, C430S942000

Reexamination Certificate

active

07154105

ABSTRACT:
Provided is a method of exposing using an electron beam. The provided method of exposing using the electron beam includes defining main fields on an exposure area of an electron beam exposure target and defining a plurality of sub-fields on the main fields, selecting a main field to be exposed, selecting at least one sub-field of the selected main field, exposing the selected sub-field by using the electron beam, and selecting at least one of the other sub-field, which is not adjacent to the previously selected sub-field and not exposed yet, and exposing the sub-field by using the electron beam.

REFERENCES:
patent: 5874198 (1999-02-01), Okino
patent: 6180289 (2001-01-01), Hirayanagi
patent: 6657210 (2003-12-01), Muraki
patent: 2001-185477 (2001-07-01), None

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