Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2006-12-26
2006-12-26
Berman, Jack (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S492100, C250S492220, C250S492210, C250S491100, C250S3960ML, C430S005000, C430S296000, C430S022000, C430S030000, C430S942000
Reexamination Certificate
active
07154105
ABSTRACT:
Provided is a method of exposing using an electron beam. The provided method of exposing using the electron beam includes defining main fields on an exposure area of an electron beam exposure target and defining a plurality of sub-fields on the main fields, selecting a main field to be exposed, selecting at least one sub-field of the selected main field, exposing the selected sub-field by using the electron beam, and selecting at least one of the other sub-field, which is not adjacent to the previously selected sub-field and not exposed yet, and exposing the sub-field by using the electron beam.
REFERENCES:
patent: 5874198 (1999-02-01), Okino
patent: 6180289 (2001-01-01), Hirayanagi
patent: 6657210 (2003-12-01), Muraki
patent: 2001-185477 (2001-07-01), None
Cho Eun-hyoung
Jung Mee-suk
Kim Hae-sung
Lee Myung-bok
Sohn Jin-seung
Berman Jack
Hashmi Zia R.
Samsung Electronics Co,. Ltd.
Sughrue & Mion, PLLC
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