Method of evaluating the gate oxide of non-volatile EPROM, EEPRO

Details Method of evaluating the gate oxide of non-volatile EPROM, EEPRO Method of evaluating the gate oxide of non-volatile EPROM, EEPRO

1997-04-01

1998-08-11

Yoo, Do Hyun

Static information storage and retrieval

Floating gate

Particular connection

365182, 36518533, 36518907, 365201, G11C 2900

Patent

active

057936757

ABSTRACT:
A method employing a test structure identical to the memory array whose gate oxide quality is to be determined, except for the fact that the cells are connected electrically parallel to one another. The test structure is so stressed electrically as to extract electrons from the floating gate of the defective-gate-oxide cells and so modify the characteristic of the cell while leaving the charge of the non-defective cells unchanged. In this way, only the threshold of the defective cells is altered. A sub-threshold voltage is then applied to the test structure, and the drain current through the cells, which is related to the presence of at least one defective cell in the structure, is measured. Measurement and analysis of the current-voltage characteristic provides for determining the number of defective cells. The method is suitable for in-line quality control of the gate oxide of EPROM, EEPROM and flash-EEPROM memories.

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