Method of evaluating silicon wafers

Details Method of evaluating silicon wafers Method of evaluating silicon wafers

1997-12-29

1999-08-24

Utech, Benjamin

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Optical characteristic sensed

216 85, 216 90, 216 99, B44C 122, H01L 21302

Patent

active

059435496

ABSTRACT:
The method of evaluating silicon wafers according to this invention is capable of predicating degradation of the quality of oxide film insulation, which is incurred, on the silicon wafers, by process faults or local residual strains undetectable by the naked eye. The method includes the following steps of: removing selectively a surface of a silicon wafer treated by mirror polishing by using an etching selectivity caused by an unordinary surface state; counting the number of etch pits on the surface of the silicon wafer with the aid of an optical microscope; and judging the quality of the silicon wafer based on the etch pit density, which is calculated from the above number of etch pits, and the threshold value of etch pit density. The threshold value of etch pit density of the silicon wafer treated by selective etching is set to be below 5.times.10.sup.5 pits/cm.sup.2, and improvements to the processing of production lines relating to low-quality silicon wafers can be made.

REFERENCES:
patent: 3765956 (1973-10-01), Li
patent: 5271796 (1993-12-01), Miyashita et al.
patent: 5374582 (1994-12-01), Okonogi et al.
patent: 5843322 (1998-12-01), Chandler, Jr.

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