Method of evaluating a silicon wafer

Details Method of evaluating a silicon wafer Method of evaluating a silicon wafer

1997-12-29

1999-11-23

Hiteshew, Felisa C.

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

438745, 438751, 438753, 438750, 438754, 156612, 156643, H01L 21312

Patent

active

059900229

ABSTRACT:
The evaluating method includes: dipping a mirror-polished silicon wafer in a dilute hydrofluoric acid; washing the surface of the silicon wafer; subjecting the surface-washed silicon wafer to a heat treatment in an oxygen atmosphere to form a thermal oxidation film; forming a predetermined number of polycrystalline silicon electrodes having a predetermined area on the thermal oxidation film; applying a voltage to each electrode between the predetermined number of polycrystalline silicon electrodes and the silicon wafer; and judging the quality of the mirror-polishing process of the silicon wafers in accordance with the breakdown electric field intensity of the leakage current obtained by measuring the oxide film insulation.

REFERENCES:
patent: 4053335 (1977-10-01), Hu
patent: 5310703 (1994-05-01), Visser et al.
patent: 5734195 (1998-03-01), Takizawa et al.

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