Method of etching substrates having a low thermal conductivity

Details Method of etching substrates having a low thermal conductivity Method of etching substrates having a low thermal conductivity

1991-09-30

1994-03-22

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156668, 156644, 20419236, B01J 1500

Patent

active

052960919

ABSTRACT:
Disclosed is a vacuum reactor for etching substrates having a low thermal conductivity to a high degree of etch rate uniformity, wherein the substrates to be etched are arranged in a holder at a predetermined spacing from the cathode to which RF energy is applied. According to a preferred embodiment of the invention, the cathode is raised in the area of the substrate to be etched to within a spacing of about 0.2 mm from the bottom side of the substrate. The cathode is made of aluminium, and is provided in the area of the substrate to be etched with a layer which acts as a black radiator. The heat formed during RIE is removed by radiation, and the radiation reflected from the cathode to the substrate is absorbed by the layer. Also disclosed is a method of etching substrates having a low thermal conductivity, in particular plastic substrates.

REFERENCES:
patent: 3884787 (1975-05-01), Kuehnle
patent: 4129881 (1978-12-01), Reichel et al.
patent: 4282924 (1981-08-01), Faretra
patent: 4399016 (1983-08-01), Tsukada et al.
patent: 4514636 (1985-04-01), King
patent: 4624728 (1986-11-01), Bithell et al.
patent: 4736087 (1988-04-01), Whitlock et al.
patent: 4999320 (1991-03-01), Douglas
Durney, Electroplating Engineering Handbook, 4th Edition, Van Nostrand Reinhold Company, Inc., 1984, p. 396.
Yamamoto, S., "Substrate Holder for Electron Beam Exposing Unit", Patent Abstracts of Japan, vol. 7, No. 99 (E-172) (1244) (Apr. 27, 1983).
Ishikawa, T., "Wafer Holder", Patent Abstracts of Japan, vol. 8, No. 198 (E-265) (1635) (Sep. 11, 1984).
"Backside Etch of Silicon Nitride on Device Wafers", Research Disclosure, Emsworth, Hampshire, GB, No. 26238 (Feb. 1986).
Fortuno, G., et al., "Electrostatic Wafer Holder for Wafer Cooling During Reactive Ion Etching", IBM Tech. Discl. Bull., vol. 31, No. 1 (Jun. 1988) pp. 462-464.

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