Method of etching silicon carbide

Details Method of etching silicon carbide Method of etching silicon carbide

1995-10-02

1996-11-05

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566571, 15665911, 15666111, 216 41, 216 67, 216 79, H01L 2100

Patent

active

055713742

ABSTRACT:
A mask (12) is applied to a silicon carbide substrate (11) in order to etch the substrate (11). The material used for the mask (12) has a Mohs hardness factor greater than 4 in order to prevent sputtering material from the mask (12) onto the substrate (11). An oxygen and sulfur hexafluoride plasma is utilized to perform the etch.

REFERENCES:
patent: 5234537 (1993-08-01), Nagano et al.
patent: 5254215 (1993-10-01), Terakado et al.

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