Method of etching silicon by enhancing silicon etching capabilit

Details Method of etching silicon by enhancing silicon etching capabilit Method of etching silicon by enhancing silicon etching capabilit

1988-04-28

1989-08-22

Lacey, David L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156657, 252 795, 134 2, 134 3, B44C 122, C09K 1302

Patent

active

048592803

ABSTRACT:
The ability of alkali hydroxide to etch silicon is enhanced by the controlled addition of metallic salts which readily dissociate in a strong base (pH.gtoreq.10) solution. When introduced into the alkali hydroxide (e.g. potassium hydroxide) solution, the controlled concentrations of additive metallic ions increase the electronegativity of the solution and thereby enhance its ability to attract electrons away from the silicon atoms within the crystal lattice being etched. By adding controlled levels of properly chosen electropositive ions, the rate at which the electrons are removed from the silicon atoms in the surface planes of the crystal lattice that are exposed to the etching solution can be controllably increased. As a result of removal of the electrons from the silicon atoms, the silicon atoms dissolve out of the crystal planes at rates modified by the degree of impurity addition, resulting in improved etching characteristics and geometries over that of conventionally employed alkali hydroxide solution.

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