Method of etching sendust and method of pattern-etching sendust

Details Method of etching sendust and method of pattern-etching sendust Method of etching sendust and method of pattern-etching sendust

1993-07-14

1995-05-09

Breneman, R. Bruce

Etching a substrate: processes

Nongaseous phase etching of substrate

Irradiating, ion implanting, alloying, diffusing, or...

216 99, 216103, 216 51, B44C 122

Patent

active

054136725

ABSTRACT:
An etching method for etching a sendust film formed on a substrate is disclosed. In this method, a mixture of acid solutions of nitric acid and hydrochloric acid is used as an etching liquid. The etching is desirably effected while the sendust film is directly or indirectly held in electrical connection with a ferrite member, with an area of a portion of the ferrite member which contacts the etching liquid being twice to twelve times a total area of etched portions of the sendust film. Also disclosed is a method for pattern-etching a sendust film, and a chromium base film formed between the sendust film and a substrate, which includes the steps of: (a) etching the sendust film to form a predetermined sendust pattern; and (b) etching the chromium base film to form a chromium pattern which conforms to the predetermined sendust pattern, such that the chromium base film is directly or indirectly held in electrical connection with a chromium bulk.

REFERENCES:
patent: 4890378 (1990-01-01), Suzuki
patent: 4948460 (1990-08-01), Sandaiji
patent: 5084129 (1992-01-01), Fukuda et al.
patent: 5189586 (1993-02-01), Pisharody
patent: 5195004 (1993-03-01), Okuda
Van Nostrand Reinhold Encyclopedia of Chemistry, 4th Ed. 1984 p. 95.

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