Method of etching sapphire utilizing sulfur hexafluoride

Details Method of etching sapphire utilizing sulfur hexafluoride Method of etching sapphire utilizing sulfur hexafluoride

1976-10-29

1977-10-04

Van Horn, Charles E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156613, 156643, 156646, 156655, 156661, 156667, H01L 213 8

Patent

active

040522512

ABSTRACT:
A process for forming a blind hole having an isosceles trapezoidal cross-section in a sapphire substrate using a sulfur hexafluoride gas etchant and an etch mask of silicon nitride on top of silicon dioxide. A composite of sapphire, silicon dioxide and silicon nitride wherein silicon dioxide is located in between the sapphire and the silicon nitride; and the silicon nitride and silicon dioxide are congruently apertured.

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patent: 3574014 (1971-04-01), Hugle
patent: 3629016 (1971-12-01), Glendinning et al.
patent: 3652324 (1972-03-01), Chu et al.
patent: 3679502 (1972-07-01), Hads
patent: 3717514 (1973-02-01), Burgess
patent: 3743552 (1973-07-01), Fa
patent: 4008111 (1977-02-01), Rutz
Stinson et al., "Sulfur Hexafluoride Etching Effects on Silicon", J. Electrochemical Society, vol. 123, No. 4, Apr. 1976, pp. 551-555.
Anderson et al., "Etching of SiO Using Plasma", IBM Technical Disclosure Bulletin, vol. 16, No. 6, Nov. 1973, p. 1892.

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