Method of etching refractory metal film on semiconductor structu

Details Method of etching refractory metal film on semiconductor structu Method of etching refractory metal film on semiconductor structu

1983-06-13

1984-04-17

Massie, Jerome W.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

134 2, 156664, 252 791, H01L 21308

Patent

active

044432950

ABSTRACT:
A method is disclosed of etching a refractory metal layer on a semiconductor structure comprising subjecting it to a mixture of a Lewis base and an oxidizing agent. In the preferred embodiment a method is described for etching a tungsten-titanium layer on a semiconductor structure by immersing it in a mixture of triethylamine and hydrogen peroxide.

REFERENCES:
patent: 3529350 (1970-09-01), Rairden
patent: 3669776 (1972-06-01), Eppensteiner
patent: 3737306 (1973-06-01), Byrnes et al.
patent: 3841931 (1974-10-01), MacAurthur et al.
patent: 3944496 (1976-03-01), Coggins et al.
patent: 4267012 (1981-05-01), Pierce et al.

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