Method of etching polysilicon layer

Details Method of etching polysilicon layer Method of etching polysilicon layer

1996-04-12

1999-09-14

McCarmish, Marion

Etching a substrate: processes

Etching of semiconductor material to produce an article...

216 67, 438710, 438719, H01L 2302

Patent

active

059518790

ABSTRACT:
A highly reliable semiconductor IC circuit can be produced by this etching method: A resist layer is formed on a polysilicon layer which is formed on a silicon dioxide layer on a silicon substrate. The resist layer is used as a mask, and silicon oxide layer deposits thereon while polysilicon layer is being etched. Carbon emission out of the resist layer is thus restrained, and thereby a selectivity, an etching speed ratio of polysilicon layer vs. silicon dioxide layer, is substantially raised.

REFERENCES:
patent: 4341009 (1982-07-01), Bartholomew et al.
patent: 5362361 (1994-11-01), Tatsumi
patent: 5560804 (1996-10-01), Higuchi et al.
patent: 5645683 (1997-07-01), Miyamoto

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