Method of etching polyimide

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156651, 156655, 1566591, 156668, 430316, 430317, B29C 1708, C03C 1500, C03C 2506

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active

043537782

ABSTRACT:
In etching openings in polyimide film, the film is first etched with a basic reagent in its uncured or partially cured state to form the desired openings, and thereafter, the film is cured. However, this will leave a layer of disturbed material surrounding the openings which has absorbed some reagent and will not fully cure and, therefore, not provide topography suitable for reliable interconnection and metal adherence. This disturbed material is removed by a second etch in a basic reagent, following additional curing to a sufficient extent to prevent any etching of the polyimide free of absorbed etchant. Thereby, suitable topography and adherence is provided.

REFERENCES:
patent: 3767493 (1973-10-01), Kump
patent: 4113550 (1978-09-01), Saiki et al.
patent: 4152195 (1979-05-01), Bahrle et al.
IBM Technical Disclosure Bulletin, vol. 20, No. 2, Jul. 1977, p. 525+, "Flash Etch Technique for Polyimide Insulated Double Metal Contact", H. C. Cook, J. S. Kristoff and C. J. Hamel.
IBM Technical Disclosure Bulletin, vol. 14, No. 9, Feb. 1972, p. 2607, "Etching Technique for Minimum Undercutting", by L. M. Elijah, R. M. Esposito, A. Phillips and A. V. S. Satya.

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