Method of etching metal with increased etching selectivity

Details Method of etching metal with increased etching selectivity Method of etching metal with increased etching selectivity

1996-10-18

1999-11-30

Breneman, Bruce

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

438705, 438720, 438742, 438783, 438976, 430318, H01L 21302

Patent

active

059942258

ABSTRACT:
A method for etching metal which can increase the metal-to-photoresist etching selectivity of a metal layer aimed to be etched with respect to a photoresist layer overlaying the metal layer. The method includes a first step of forming a cap oxide layer over the metal layer; a second step of forming a photoresist layer with a desired pattern over the cap oxide layer; a third step of conducting an ion implantation process on the photoresist layer; and a final step of conducting an etching process on the semiconductor wafer by using the photoresist layer as a mask so as to etch away exposed portions of the metal layer that are uncovered by the photoresist layer. Through experiments, it is found that the invention provides a significantly improved etching selectivity over the prior art.

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Shone, F. et al, "Gate oxide charging and its elimination for metal antenna capacitor and transistor in VLSI CMOS double layer metal technology" 1989 Symposium on VLSI Technology, pp. 73-74, Jun. 1988.
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