Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Reexamination Certificate
2004-08-31
2008-08-12
Duda, Kathleen (Department: 1795)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
Reexamination Certificate
active
07410748
ABSTRACT:
A technique for etching with a single layered patterned photomask at wavelengths of 193 nanometers or less. Specifically, a method for etching a bottom anti-reflectant coating layer that utilizes a combination of CF4, CH2F2, and O2to produce a stabilized pattern in the photoresist layer. The etching process results in a structure with a defined pattern having minimal defects and that maintains integrity through the remainder of the etching. A second etching process implementing an etchant having a high dielectric to photoresist selectivity may be used to further etch underlying layers
REFERENCES:
patent: 5256245 (1993-10-01), Keller et al.
patent: 5338395 (1994-08-01), Keller et al.
patent: 5346586 (1994-09-01), Keller
patent: 5387312 (1995-02-01), Keller et al.
patent: 5492597 (1996-02-01), Keller
patent: 5620615 (1997-04-01), Keller
patent: 5644153 (1997-07-01), Keller
patent: 5651856 (1997-07-01), Keller et al.
patent: 5652170 (1997-07-01), Keller et al.
patent: 5700580 (1997-12-01), Becker et al.
patent: 5756216 (1998-05-01), Becker et al.
patent: 5811329 (1998-09-01), Ahmad et al.
patent: 5858865 (1999-01-01), Juengling et al.
patent: 5906950 (1999-05-01), Keller et al.
patent: 5923977 (1999-07-01), Ahmad et al.
patent: 5968844 (1999-10-01), Keller
patent: 6010930 (2000-01-01), Keller et al.
patent: 6018173 (2000-01-01), Keller et al.
patent: 6060783 (2000-05-01), Juengling et al.
patent: 6069087 (2000-05-01), Keller et al.
patent: 6136637 (2000-10-01), Ahmad et al.
patent: 6165827 (2000-12-01), Ahmad et al.
patent: 6319779 (2001-11-01), Ahmad et al.
patent: 6333539 (2001-12-01), Ahmad et al.
patent: 6346439 (2002-02-01), Ahmad et al.
patent: 6432765 (2002-08-01), Keller et al.
patent: 6583065 (2003-06-01), Williams et al.
patent: 2003/0132197 (2003-07-01), Ke et al.
patent: 2003/0222345 (2003-12-01), Kenyon et al.
patent: 2004/0009437 (2004-01-01), Chun et al.
Duda Kathleen
Fletcher Yoder
Micro)n Technology, Inc.
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