Method of etching magnetic material, magnetoresistive film...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S421000

Reexamination Certificate

active

07015524

ABSTRACT:
A spin tunneling magnetoresistive film110, which comprises a first magnetic film111, a tunnel film112and a second magnetic film113, is formed on a substrate101, and on the top surface of the spin tunneling magnetoresistive film110a resist film102having a desired shape is formed. The magnetic films111, 113are each an alloy film of a rare earth metal-transition metal. The spin tunneling magnetoresistive film110is plasma etched by using a mixed gas of carbon monoxide gas and ammonia gas. A sidewall substance103adhering to a side surface of the spin tunneling magnetoresistive film110is oxidized or nitrided by performing plasma etching by use of oxygen gas or nitrogen gas.

REFERENCES:
patent: 6219275 (2001-04-01), Nishimura
patent: 6391216 (2002-05-01), Nakatani
patent: 6480411 (2002-11-01), Koganei
patent: 6669807 (2003-12-01), Nakatani
patent: 6713830 (2004-03-01), Nishimura et al.
patent: 6743340 (2004-06-01), Fu
patent: 2004/0167997 (2004-08-01), Ikeda
patent: 11-92970 (1999-04-01), None
patent: 11-213650 (1999-08-01), None
patent: 2003-78184 (2003-03-01), None

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