Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-03-21
2006-03-21
Nhu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S421000
Reexamination Certificate
active
07015524
ABSTRACT:
A spin tunneling magnetoresistive film110, which comprises a first magnetic film111, a tunnel film112and a second magnetic film113, is formed on a substrate101, and on the top surface of the spin tunneling magnetoresistive film110a resist film102having a desired shape is formed. The magnetic films111, 113are each an alloy film of a rare earth metal-transition metal. The spin tunneling magnetoresistive film110is plasma etched by using a mixed gas of carbon monoxide gas and ammonia gas. A sidewall substance103adhering to a side surface of the spin tunneling magnetoresistive film110is oxidized or nitrided by performing plasma etching by use of oxygen gas or nitrogen gas.
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Canon Kabushiki Kaisha
Fitzpatrick ,Cella, Harper & Scinto
Nhu David
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