Method of etching in the presence of positive photoresist

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156654, 1566591, 156664, 252 745, C23F 100, B44C 122

Patent

active

049405101

ABSTRACT:
A wet chemical etchant for etching chromium films that have been patterned with positive photoresist comprising about 3 to about 9 grams potassium hydroxide per liter of water and about 15 to about 25 grams potassium permanganate per liter of water.

REFERENCES:
patent: 3098043 (1963-07-01), Wendell
patent: 3639185 (1972-02-01), Colom et al.
patent: 3652351 (1972-03-01), Guisti
patent: 3773670 (1973-11-01), Colom et al.
patent: 4042729 (1977-08-01), Polichette et al.
patent: 4294651 (1981-10-01), Ohmura
patent: 4425380 (1984-01-01), Nuzzi et al.
patent: 4430154 (1984-02-01), Stahl et al.
patent: 4480288 (1984-10-01), Gazdik et al.
patent: 4517051 (1985-05-01), Gazdik et al.
patent: 4566939 (1986-01-01), Miller et al.
patent: 4592852 (1986-06-01), Corduvelis et al.
patent: 4601783 (1986-07-01), Krulik
patent: 4601784 (1986-07-01), Krulik
patent: 4629636 (1986-12-01), Courdivelis et al.
patent: 4681654 (1987-07-01), Clementi et al.
patent: 4698124 (1987-10-01), Krulik
Vossen and Kern, Thin Film Processes, Academic Press, New York, N.Y., 1978, p. 408.

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