Method of etching etch-resistant materials

Details Method of etching etch-resistant materials Method of etching etch-resistant materials

1986-12-19

1987-12-15

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156663, 252 792, B44C 122, C23F 100

Patent

active

047131454

ABSTRACT:
A method for etching sapphire and other etch-resistant materials is disclosed. The method consists of preparing a hot, precipitated-gel form of phosphoric acid solution and immersing the item to be etched in the hot, precipitated-gel. The gel is prepared by heating a liquid phosphoric acid solution, causing water contained in the solution to evaporate. As the water evaporates, the solution thickens and eventually attains the precipitated-gel state. The etching rate of a sapphire wafer immersed in the gel is on the order of 10-50 microns per hour, depending on the depth of immersion, the orientation of the wafer and the temperature of the gel.

REFERENCES:
patent: 3971683 (1976-07-01), Briska et al.
patent: 4381216 (1983-04-01), Singh
patent: 4610759 (1986-09-01), Klages
patent: 4647477 (1987-03-01), DeLuca

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