Method of etching diamond thin films

Details Method of etching diamond thin films Method of etching diamond thin films

1991-03-18

1992-11-03

Simmons, David A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 20419232, H01L 2100

Patent

active

051604051

ABSTRACT:
Described is an etching method of a diamond film which comprises providing a diamond film in an atmosphere of a gas containing at least oxygen and/or hydrogen and subjecting the diamond film to an irradiation of an electron beam generated by direct current discharge through a pattern of a mask. In this condition, when the diamond film is contacted with the plasma produced by the electron beam in the atmosphere, the unmasked areas are irradiated by the electron beam, and converted to graphite. The graphite is more readily etched by the plasma, so that the diamond film can be etched at a high rate. The etching through a mask ensures a fine etched pattern of the diamond film. In addition, a diamond film with a large area can be etched by this method.

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patent: 4957591 (1990-09-01), Sato et al.
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