Method of etching crystalline material with etchant injection in

Details Method of etching crystalline material with etchant injection in Method of etching crystalline material with etchant injection in

1989-10-02

1991-03-12

Lacey, David L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, H01L 21306

Patent

active

049990837

ABSTRACT:
A fine working method of a crystalline material comprises forming an ion injection region in a crystalline material by irradiating a focused ion beam on a crystalline material and subsequently removing a predetermined region of the ion injection region by applying a chemical etching treatment. The method includes performing ion injection where no removal of the predetermined region occurs even if the crystalline material is exposed to an etchant. The predetermined region is removed by injecting an etchant into the ion injection region.

REFERENCES:
patent: 4264382 (1981-04-01), Anantha et al.
patent: 4450041 (1984-05-01), Aklufi
patent: 4523971 (1985-06-01), Cuomo et al.
patent: 4725332 (1988-02-01), Spohr
Ashby, Doping Level Selective Photochemical Dry Etching of GaAs, Appl. Phys. Lett. 46(8), Apr. 15, 1985, pp. 752-754.
Parry, Localized Substrate Heating During Ion Implantation, Jan./Feb. 1978, J. Vac. Sci. Tech., 15(1), pp. 111-115.
Wang, A Mass-Separating Focused-Ion-Beam System for Maskless Ion Implantation, Nov./Dec. 1981, J. Vac. Sci. Tech, 19(4), pp. 1158-1163.
J. I. Pankove et al., "Bombardment-Induced Corrosion Resistance of Aluminum", Applied Physics Letters, vol. 39, No. 1, Jul. 1, 1981, pp. 119-121, American Institute of Physics, New York.
K. Gamo et al., "Characteristics of Al Maskless Patterning Using Focused Ion Beams", Nuclear Instruments and Methods in Physics Research, Section B7/8, No. 1, Part II, Mar. 1985, pp. 864-868, Elsevier Science Publishers B.V. (North Holland Physics Publishing Division), Amsterdam, NL.

Affiliated with

Also associated with

Rating

Method of etching crystalline material with etchant injection in does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of etching crystalline material with etchant injection in, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of etching crystalline material with etchant injection in will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-447057